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Demonstration of suppressed phonon tunneling losses in phononic bandgap shielded membrane resonators for high-Q optomechanics

机译:声子带隙中受抑制的声子隧穿损失的证明   用于高Q光学机械的屏蔽膜谐振器

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摘要

Dielectric membranes with exceptional mechanical and optical propertiespresent one of the most promising platforms in quantum opto-mechanics. Theperformance of stressed silicon nitride nanomembranes as mechanical resonatorsnotoriously depends on how their frame is clamped to the sample mount, which inpractice usually necessitates delicate, and difficult-to-reproduce mountingsolutions. Here, we demonstrate that a phononic bandgap shield integrated inthe membrane's silicon frame eliminates this dependence, by suppressingdissipation through phonon tunneling. We dry-etch the membrane's frame so thatit assumes the form of a $\mathrm{cm}$-sized bridge featuring a 1-dimensionalperiodic pattern, whose phononic density of states is tailored to exhibit one,or several, full band gaps around the membrane's high-$Q$ modes in theMHz-range. We quantify the effectiveness of this phononic bandgap shield byoptical interferometry measuring both the suppressed transmission ofvibrations, as well as the influence of frame clamping conditions on themembrane modes. We find suppressions up to $40~\mathrm{dB}$ and, for threedifferent realized phononic structures, consistently observe significantsuppression of the dependence of the membrane's modes on sample clamping - ifthe mode's frequency lies in the bandgap. As a result, we achieve membrane modequality factors of $5\times 10^{6}$ with samples that are tightly bolted to the$8~\mathrm{K}$-cold finger of a cryostat. $Q\times f$-products of $6\times10^{12}~\mathrm{Hz}$ at $300~\mathrm{K}$ and $14\times 10^{12}~\mathrm{Hz}$ at$8~\mathrm{K}$ are observed, satisfying one of the main requirements foroptical cooling of mechanical vibrations to their quantum ground-state.
机译:具有优异的机械和光学性能的介电膜是量子光力学中最有前途的平台之一。应力氮化硅纳米膜作为机械谐振器的性能众所周知地取决于其框架如何固定在样品架上,而这种做法通常需要精密且难以复制的安装解决方案。在这里,我们证明了集成在膜的硅框架中的声带隙屏蔽可以通过抑制声子隧穿的耗散来消除这种依赖性。我们对膜的框架进行干法蚀刻,以使其呈具有一维周期性图案的$ \ mathrm {cm} $大小的桥的形式,该桥的声子态密度被定制为在膜的周围表现出一个或多个全带隙。膜的高$ Q $模式在MHz范围内。我们通过光学干涉测量来测量这种声子带隙屏蔽的有效性,该干涉测量测量了抑制的振动传输以及框架夹持条件对薄膜模式的影响。我们发现抑制高达40〜\ mathrm {dB} $,并且对于三种不同的已实现声子结构,始终观察到膜模式对样本钳制的依赖性得到了显着抑制-如果模式的频率在带隙中。结果,通过将样品紧紧固定在低温恒温器的$ 8〜\ mathrm {K} $的冷指上,我们获得了5乘以10 ^ {6} $的膜模式品质因子。 $ Q \ timesf $-$ 300的$ 6 \ times10 ^ {12}〜\ mathrm {Hz} $的乘积$ \ mathrm {K} $和$ 14 \ times的$ 10 \ 10 ^ {12}〜\ mathrm {Hz} $的乘积$ 8观察到〜\ mathrm {K} $,满足了将机械振动光学冷却到其量子基态的主要要求之一。

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